Journal papers:

  1. Md. Anower Hossain, Kean Thong Khoo, Xin Cui, Geedhika K Poduval, Tian Zhang, Xiang Li, Wei Min Li, BramHoex, Atomic layer deposition enabling higher efficiency solar cells: A review, Nano Material Science, https://doi.org/10.1016/j.nanoms.2019.10.001 (2019).
  2. Utkarshaa Varshney, Brett Hallam, Phillip Hamer, Alison Ciesla, Daniel Chen, Shaoyang Liu, Chandany Sen, Aref Samadi, Malcolm Abbott, Catherine Chan, Bram Hoex, Controlling Light- and Elevated-Temperature-Induced Degradation With Thin Film Barrier Layers, IEEE Journal of Photovoltaics, 10.1109/JPHOTOV.2019.2945199 (2019).
  3. Xin Cui, Kaiwen Sun, Jialiang Huang, Jae S. Yun, Chang-Yeh Lee, Chang Yan, Heng Sun, Yuanfang Zhang, Chaowei Xue, Katja Eder, Limei Yang, Julie M. Cairney, Jan Seidel, N. J. Ekins-Daukes, Martin Green, Bram Hoex and Xiaojing Hao, Cd-Free Cu2ZnSnS4 solar cell with an efficiency greater than 10% enabled by Al2O3 passivation layers, Energy & Environmental Science,  10.1039/c9ee01726g (2019)
  4. Z.G.Huang, K.Gao, X.G.Wang, C.Xu, X.M.Song, L.X.Shi, Y.Zhang, B.Hoex, W.Z.Shen, Large-area MACE Si nano-inverted-pyramids for PERC solar cell application, Solar Energy 188, 300 (2019).
  5. Jian He, Md. Anower Hossain, Hao Lin, Wenjie Wang, Siva Krishna Karuturi, Bram Hoex, Jichun Ye, Pingqi Gao, James Bullock, and Yimao Wan, 15% Efficiency Ultrathin Silicon Solar Cells with Fluorine-Doped Titanium Oxide and Chemically Tailored Poly(3,4-ethylenedioxythiophene):Poly(styrenesulfonate) as Asymmetric Heterocontact, ACS NANO, 10.1021/acsnano.9b01754 (2019).
  6. Utkarshaa Varshney , Malcolm Abbott, Alison Ciesla, Daniel Chen , Shaoyang Liu , Chandany Sen, Moonyong Kim, Stuart Wenham, Bram Hoex, and Catherine Chan, Evaluating the Impact of SiN_x Thickness on Lifetime Degradation in Silicon, IEEE Journal of Photovoltaics, 10.1109/JPHOTOV.2019.2896671 (2019)
  7. Tian Zhang, Md. Anower Hossain, Chang-Yeh Lee, Yahya Zakaria, Amir A. Abdallah, and Bram Hoex, Atomic layer deposited ZnxNi1−xO: A thermally stable hole selective contact for silicon solar cells, Applied Physics Letters 113, 262102 (2018).
  8. Xin Cui , Kaiwen Sun , Jialiang Huang, Chang-Yeh Lee, Chang Yan, Heng Sun, Yuanfang Zhang, Fangyang Liu , Md. Anower Hossain, Yahya Zakaria, Lydia Helena Wong , Martin Green, Bram Hoex, and Xiaojing Hao, Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer, Chemistry of Materials, DOI: 10.1021/acs.chemmater.8b03398
  9. T. Zhang, C.Y. Lee, Y. Wan, S. Lim, B. Hoex, Investigation of the thermal stability of MoOx as hole-selective contacts for Si solar cells, Journal of Applied Physics 124, 073106 (2018)
  10. Open Access: C.-Y. Lee, S. Deng, T. Zhang, X. Cui, K. T. Khoo, K. Kim, B. Hoex, Evaluating the impact of thermal annealing on c-Si/Al2O3 interface: Correlating electronic properties to infrared absorption, AIP Advances 8 (7), 10.1063/1.5036738
  11. Chang‐Yeh Lee Shaozhou Wang Xin Cui Tian Zhang Rong Deng Kean T. Khoo, Bram Hoex, Improving the Silicon Surface Passivation by Aluminum Oxide Grown Using a Non‐Pyrophoric Aluminum Precursor, Physica Status Solidi: Rapid Research Letters, 1800156 (2018)
  12. Tian Zhang, Chang-Yeh Lee, Bil Gong, Sean Lim, Stuart Wenham, Bram Hoex, In situ x-ray photoelectron emission analysis of the thermal stability of atomic layer deposited WOx as hole-selective contacts for Si solar cells, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 36, 031601 (2018)
  13. Rahman T, To A, Pollard ME, Grant NE, Colwell J, Payne DNR, Murphy JD, Bagnall DM, Hoex B, Boden SA, Minimising bulk lifetime degradation during the processing of interdigitated back contact silicon solar cells, Progress in Photovoltaics: Research and Applications 26(1), 38-47 (2018)
  14. To A, Hoex B, Extracting dielectric fixed charge density on highly doped crystalline-silicon surfaces using photoconductance measurements, Journal of Applied Physics 122(19), 21 (2017)
  15. To A, Tahir S, Garavaglia A, Li WM, Li X, Hoex B, The Effect of Bifacial AlOx Deposition on PERC Solar Cell Performance IEEE Journal of Photovoltaics 7(6), 1528-1538 (2017).
  16. Tong J, To A, Lennon A, Hoex B, Unintentional consequences of dual mode plasma reactors: Implications for upscaling lab-record silicon surface passivation by silicon nitride, JAPANESE JOURNAL OF APPLIED PHYSICS 56(8), 08MB12 (2017)
  17. Lee C-Y, Aziz MIA, Wenham S, Hoex B, Characterisation of thermal annealed WOx on p-type silicon for hole-selective contacts, JAPANESE JOURNAL OF APPLIED PHYSICS 56(8), 08MA08 (2017)
  18. Bonilla RS, Hoex B, Hamer P, Wilshaw PR, Dielectric surface passivation for silicon solar cells: A review, Physica Status Solidi (A) Applications and Materials Science 214(7), 1700293
  19. Hallam B, Chen D, Kim M, Stefani B, Hoex B, Abbott M, Wenham S, The role of hydrogenation and gettering in enhancing the efficiency of next-generation Si solar cells: An industrial perspective, Physica Status Solidi (A) Applications and Materials Science 214(7), 1700305
  20. Li M, Ma FJ, Peters IM, Shetty KD, Aberle AG, Hoex B, Samudra GS, Numerical Simulation of Doping Process by BBr3 Tube Diffusion for Industrial n -Type Silicon Wafer Solar Cells, IEEE Journal of Photovoltaics 7(3), 755-762 (2017)
  21. Li H, Kim K, Hallam B, Hoex B, Wenham S, Abbott M, POCl3 diffusion for industrial Si solar cell emitter formation, Frontiers in Energy 11(1), 42-51 (2017)
  22. Han J, Abbott MD, Hamer PG, Hoex B, Wang L, Lochtefeld A, Barnett AM, Ultrathin Silicon Solar Cell Loss Analysis, IEEE Journal of Photovoltaics 6(5), 1160-1166 (2016)
  23. Payne DNR, Chan CE, Hallam BJ, Hoex B, Abbott MD, Wenham SR, Bagnall DM, Rapid passivation of carrier-induced defects in p-type multi-crystalline silicon, Solar Energy Materials and Solar Cells 158, 102-106 (2016)
  24. Payne DNR, Chan CE, Hallam BJ, Hoex B, Abbott MD, Wenham SR, Bagnall DM, Acceleration and mitigation of carrier-induced degradation in p-type multi-crystalline silicon, Physica Status Solidi – Rapid Research Letters 10(3), 237-241 (2016)

Conference papers:

  1. Md. Anower Hossain, Sergey Rashkeev, Vinod Madhavan, Tian Zhang, Chang-Yeh Lee, Bram Hoex, Nouar Tabet, and Amir Abdallah, Transition metal oxides as passivated hole-contacts layer for silicon solar cells: Intrinsic and extrinsic defects in MoO3 from first-principles calculations, presented at the 35th EUPVSEC
  2. Bram Hoex, Marc Dielen, Meng Lei, Tian Zhang, Chang-Yeh Lee, Quantifying Optical Losses of Silicon Solar Cells with Carrier Selective Hole Contacts, AIP Conference Proceedings 1999, 040010 (2018); https://doi.org/10.1063/1.5049273 (open access)
  3. Tian Zhang, Chang-Yeh Lee, Bin Gong, Bram HoexThermal, Stability Analysis of WOx and MoOx as Hole-Selective Contacts for Si Solar Cells Using In situ XPS, AIP Conference Proceedings 1999, 040027 (2018); https://doi.org/10.1063/1.5049290 (open access)
  4. To A, Min Li W, Li X, Hoex B, The effects of bifacial deposition of ALD AlOx on the contact properties of screen-printed contacts for p-type PERC solar cells, Energy Procedia. 124, 914 (2017)