RLC_0092p

Shuo Deng is working on Atomic Layer Deposition (ALD) SiO2 as tunnelling oxide in carrier selective contact (TOPCon) and PECVD deposit amorphous silicon as back surface passivation. The unique capability of layer deposition with rate of Angstrom would benefit the detailed study and depositing of tunnelling oxide layer, compared with the uniformity of thermal oxidation and wet chemical oxidation.

Thin hydrogenated amorphous silicon is used as passivation layer in heterojunction solar cell which is another popular topic, as amorphous silicon has a lot of limitations by the material itself, such as low thermal stability, Staebler-Wronski effect, how to overcome these limitations and get good passivation is worth investigating.